LOW-THRESHOLD GAIN-GUIDED COUPLED-STRIPE QUANTUM-WELL DIODE-LASERS BY LASER-ASSISTED PROCESSING

被引：3

作者：

EPLER, JE

BURNHAM, RD

PAOLI, TL

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 08期

关键词：

D O I：

10.1063/1.98346

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：558 / 560

页数：3

共 10 条

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[4] LOW THRESHOLD BURIED HETEROSTRUCTURE QUANTUM-WELL DIODE-LASERS BY LASER-ASSISTED DISORDERING [J].

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[6]

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[7] HIGH-EFFICIENCY BROAD-AREA SINGLE-QUANTUM-WELL LASERS WITH NARROW SINGLE-LOBED FAR-FIELD PATTERNS PREPARED BY MOLECULAR-BEAM EPITAXY [J].

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YARIV, A .

ELECTRONICS LETTERS, 1986, 22 (02) :79-81

[8] PHASE-LOCKED SEMICONDUCTOR-LASER ARRAY [J].

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STREIFER, W .

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[9] LOW-CURRENT-THRESHOLD AND HIGH-LASING UNIFORMITY GAAS-ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

TSANG, WT .

APPLIED PHYSICS LETTERS, 1979, 34 (07) :473-475

[10]

WOHLLEBEN K, 1966, Z NATURFORSCH PT A, VA 21, P1057

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