LOW-THRESHOLD HIGH-EFFICIENCY HIGH-YIELD IMPURITY-INDUCED LAYER DISORDERING LASER BY SELF-ALIGNED SI-ZN DIFFUSION

Stripe geometry lasers defined by impurity-induced layer disordering (IILD) have been fabricated utilizing a novel technology of self-aligned Si-Zn diffusion from which both optical and electrical confinements are obtained simultaneously. The fabrication process is considerably simpler than that for the conventional IILD lasers and the parasitic p-n junction area in the laser structures is minimized. Typical lasers with threshold current I th=5.2 mA and differential quantum efficiency ηd=81% at room-temperature continuous operation as well as highly uniform yield ≳80% have been obtained.