HIGHLY EFFICIENT PSEUDOMORPHIC INGAAS/GAAS/ALGAAS SINGLE QUANTUM-WELL LASERS FOR MONOLITHIC INTEGRATION

被引：10

作者：

LARSSON, A

CODY, J

FOROUHAR, S

LANG, RJ

机构：

[1] Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 18期

关键词：

D O I：

10.1063/1.103106

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly efficient ridge waveguide pseudomorphic single quantum well lasers, emitting at 980 nm, have been fabricated from an In0.2Ga 0.8As/GaAs/AlGaAs graded-index separate confinement heterostructure grown by molecular beam epitaxy. The lateral index guiding provided by the ridge reduces the anomalously large lateral loss of optical power found in gain-guided structures, thereby reducing the internal loss by more than 50%. The low threshold current (7.6 mA) and high differential quantum efficiency (79%) obtained under continuous operation as well as the transparency of the GaAs substrate to the emitted radiation render these lasers attractive for GaAs-based optoelectronic integration.

引用

页码：1731 / 1733

页数：3

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