HIGHLY COHERENT LONG CAVITY GAAS/ALGAAS SINGLE-QUANTUM-WELL LASERS

被引：8

作者：

LARSSON, A

ANDREKSON, PA

JONSSON, B

LINDSTROM, C

机构：

[1] CHALMERS UNIV TECHNOL,DEPT OPTOELECTR & ELECT MEASUREMENTS,S-41296 GOTHENBURG,SWEDEN

[2] GEOTRON AB,DANDERYD,SWEDEN

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1989年 / 25卷 / 09期

关键词：

D O I：

10.1109/3.35227

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2013 / 2018

页数：6

共 31 条

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YARIV, A .

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YARIV, A .

APPLIED PHYSICS LETTERS, 1985, 47 (09) :905-907

[3] A MODEL FOR GRIN-SCH-SQW DIODE-LASERS [J].

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CHEN, TR ;

ZHUANG, YH ;

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VAHALA, K ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1988, 53 (04) :271-273

[6] VERY LOW THRESHOLD BURIED HETEROSTRUCTURE QUANTUM WELL LASERS BY LASER-ASSISTED DISORDERING [J].

EPLER, JE ;

THORNTON, RL ;

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APPLIED PHYSICS LETTERS, 1988, 52 (17) :1371-1373

[7] CARRIER TRAPPING IN SINGLE QUANTUM-WELLS WITH DIFFERENT CONFINEMENT STRUCTURES [J].

FELDMANN, J ;

PETER, G ;

GOBEL, EO ;

LEO, K ;

POLLAND, HJ ;

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FUJIWARA, K ;

NAKAYAMA, T .

APPLIED PHYSICS LETTERS, 1987, 51 (04) :226-228

[8] FUNDAMENTAL LINE BROADENING OF SINGLE-MODE (GAAL)AS DIODE-LASERS [J].

FLEMING, MW ;

MOORADIAN, A .

APPLIED PHYSICS LETTERS, 1981, 38 (07) :511-513

[9] NARROW SPECTRAL LINEWIDTH CHARACTERISTICS OF MONOLITHIC INTEGRATED-PASSIVE-CAVITY INGAASP/INP SEMICONDUCTOR-LASERS [J].

FUJITA, T ;

OHYA, J ;

MATSUDA, K ;

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SERIZAWA, H .

ELECTRONICS LETTERS, 1985, 21 (09) :374-376

[10] SELF LONGITUDINAL-MODE STABILIZATION IN GAAS/(ALGA)AS QUANTUM-WELL LASERS [J].

GARRETT, B ;

WHITE, IH ;

GALLAGHER, DFG .

ELECTRONICS LETTERS, 1987, 23 (22) :1193-1194

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