NARROW SPECTRAL LINEWIDTH CHARACTERISTICS OF MONOLITHIC INTEGRATED-PASSIVE-CAVITY INGAASP/INP SEMICONDUCTOR-LASERS

被引：26

作者：

FUJITA, T

OHYA, J

MATSUDA, K

ISHINO, M

SATO, H

SERIZAWA, H

机构：

[1] Matsushita Electric Industrial Co,, Central Research Lab, Moriguchi, Jpn, Matsushita Electric Industrial Co, Central Research Lab, Moriguchi, Jpn

来源：

ELECTRONICS LETTERS | 1985年 / 21卷 / 09期

关键词：

D O I：

10.1049/el:19850267

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

12

引用

收藏

页码：374 / 376

页数：3

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