SOLITARY SPECTRAL LINEWIDTH AND ITS REDUCTION WITH EXTERNAL GRATING FEEDBACK FOR A 1.55 MU-M INGAASP BH LASER

被引:20
作者
OLESEN, H
SAITO, S
MUKAI, T
SAITOH, T
MIKAMI, O
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1983年 / 22卷 / 10期
关键词
D O I
10.1143/JJAP.22.L664
中图分类号
O59 [应用物理学];
学科分类号
摘要
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页码:L664 / L666
页数:3
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共 12 条
[1]   FUNDAMENTAL LINE BROADENING OF SINGLE-MODE (GAAL)AS DIODE-LASERS [J].
FLEMING, MW ;
MOORADIAN, A .
APPLIED PHYSICS LETTERS, 1981, 38 (07) :511-513
[2]   THEORY OF THE LINEWIDTH OF SEMICONDUCTOR-LASERS [J].
HENRY, CH .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (02) :259-264
[3]  
KIKUCHI K, 1983, IECE JPN, P25
[4]   NOVEL METHOD FOR HIGH-RESOLUTION MEASUREMENT OF LASER OUTPUT SPECTRUM [J].
OKOSHI, T ;
KIKUCHI, K ;
NAKAYAMA, A .
ELECTRONICS LETTERS, 1980, 16 (16) :630-631
[5]   OSCILLATION CENTER FREQUENCY TUNING, QUANTUM FM NOISE, AND DIRECT FREQUENCY-MODULATION CHARACTERISTICS IN EXTERNAL GRATING LOADED SEMICONDUCTOR-LASERS [J].
SAITO, S ;
NILSSON, O ;
YAMAMOTO, Y .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (06) :961-970
[6]   LOW-TEMPERATURE LIQUID-PHASE EPITAXY GROWTH FOR ROOM-TEMPERATURE CW OPERATION OF 1.55-MU-M INGAASP-INP DOUBLE-HETEROSTRUCTURE LASER [J].
TAKAHEI, K ;
HAGAI, H ;
KAWAGUCHI, H .
APPLIED PHYSICS LETTERS, 1980, 36 (04) :309-310
[7]   EFFECT OF INJECTION CURRENT ON THE DIELECTRIC-CONSTANT OF AN INBUILT WAVEGUIDE IN TWIN-TRANSVERSE-JUNCTION STRIPE LASERS [J].
TURLEY, SEH ;
THOMPSON, GHB ;
LOVELACE, DF .
ELECTRONICS LETTERS, 1979, 15 (09) :256-257
[8]   MEGAHERTZ LINEWIDTH FROM A 1.5 UM SEMICONDUCTOR-LASER WITH HENE LASER INJECTION [J].
WYATT, R ;
SMITH, DW ;
CAMERON, KH .
ELECTRONICS LETTERS, 1982, 18 (07) :292-293
[9]   10-KHZ LINEWIDTH 1.5 MU-M INGAASP EXTERNAL CAVITY LASER WITH 55-NM TUNING RANGE [J].
WYATT, R ;
DEVLIN, WJ .
ELECTRONICS LETTERS, 1983, 19 (03) :110-112