SUBMILLIAMPERE LASING OF ZN-DIFFUSED MESA BURIED-HETERO ALXGA1-XAS/GAAS MULTI-QUANTUM-WELL LASERS AT 77-K

被引：8

作者：

KUROBE, A

FURUYAMA, H

NARITSUKA, S

KOKUBUN, Y

NAKAMURA, M

机构：

来源：

ELECTRONICS LETTERS | 1986年 / 22卷 / 21期

关键词：

SEMICONDUCTING ALUMINUM COMPOUNDS;

D O I：

10.1049/el:19860765

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Extremely low-threshold semiconductor lasers were fabricated by forming Zn-diffused mesa buried-hetero (DMB) structures from low-pressure MOCVD-grown Al//xGa//1// minus //xAs/GaAs multi-quantum well, separate-confinement hetero structure wafers, cw threshold currents as low as 880 mu A at 77K and 2. 4 mA at room temperature were obtained from a 100 mu m-long device.

引用

页码：1117 / 1118

页数：2

共 7 条

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[6] ULTRALOW THRESHOLD, GRADED-INDEX WAVEGUIDE, SEPARATE CONFINEMENT, CW BURIED-HETEROSTRUCTURE LASERS
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[7] VERY LOW THRESHOLD CURRENT RIDGE-WAVEGUIDE ALGAAS GAAS SINGLE-QUANTUM-WELL LASERS
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FUJII, T
[J]. ELECTRONICS LETTERS, 1985, 21 (22) : 1025 - 1026

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