LOW THRESHOLD CURRENT 1.5-MU-M BURIED HETEROSTRUCTURE LASERS USING STRAINED QUATERNARY QUANTUM-WELLS

被引：23

作者：

OSINSKI, JS ^{[1
]}

GRODZINSKI, P ^{[1
]}

ZOU, Y ^{[1
]}

DAPKUS, PD ^{[1
]}

KARIM, Z ^{[1
]}

TANGUAY, AR ^{[1
]}

机构：

[1] UNIV SO CALIF,NATL CTR INTEGRATED PHOTON TECHNOL,DEPT ELECT ENGN,LOS ANGELES,CA 90089

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1992年 / 4卷 / 12期

关键词：

D O I：

10.1109/68.180560

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Buried heterostructure lasers operating at a wavelength of 1.5 mum with four compressively strained quaternary quantum wells (strain approximately 1.8%, thickness approximately 90 angstrom) and current blocking layers were made using atmospheric pressure metalorganic chemical vapor deposition. We report pulsed room temperature threshold currents for uncoated devices as low as 4.1 mA, and as low as 0.8 mA for devices with high reflectivity mirror coatings. The dependence of threshold current on active region width is consistent with broad-area laser measurements made on the same starting wafer.

引用

页码：1313 / 1315

页数：3

共 10 条

[1] HIGH STATIC PERFORMANCE GAINAS-GAINASP SCH MQW 1.5 MU-M WAVELENGTH BURIED RIDGE STRIPE LASERS [J].

KAZMIERSKI, C ;

OUGAZZADEN, A ;

BLEZ, M ;

ROBEIN, D ;

LANDREAU, J ;

SERMAGE, B ;

BOULEY, JC ;

MIRCEA, A .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) :1794-1797

[2] EFFECTS OF WELL NUMBER, CAVITY LENGTH, AND FACET REFLECTIVITY ON THE REDUCTION OF THRESHOLD CURRENT OF GAAS/ALGAAS MULTIQUANTUM WELL LASERS [J].

KUROBE, A ;

FURUYAMA, H ;

NARITSUKA, S ;

SUGIYAMA, N ;

KOKUBUN, Y ;

NAKAMURA, M .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (04) :635-639

[3] LOW-THRESHOLD-CURRENT-DENSITY 1.5-MU-M LASERS USING COMPRESSIVELY STRAINED INGAASP QUANTUM-WELLS [J].

OSINSKI, JS ;

ZOU, Y ;

GRODZINSKI, P ;

MATHUR, A ;

DAPKUS, PD .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1992, 4 (01) :10-13

[4]

OSINSKI JS, 1992, THESIS U SO CALIFORN

[5]

STARCK C, 1992, APR INP REL MAT C NE

[6] HIGH-TEMPERATURE OPERATION OF LATTICE MATCHED AND STRAINED INGAAS-INP QUANTUM-WELL LASERS [J].

TEMKIN, H ;

TANBUNEK, T ;

LOGAN, RA ;

CEBULA, DA ;

SERGENT, AM .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (02) :100-102

[7] INGAAS INP QUANTUM-WELL LASERS WITH SUB-MA THRESHOLD CURRENT [J].

TEMKIN, H ;

DUTTA, NK ;

TANBUNEK, T ;

LOGAN, RA ;

SERGENT, AM .

APPLIED PHYSICS LETTERS, 1990, 57 (16) :1610-1612

[8]

THIJS PJA, 1991, P ECOC, V2, P31

[9] SUBMILLIAMPERE-THRESHOLD 1.5-MU-M STRAINED-LAYER MULTIPLE QUANTUM-WELL LASERS [J].

ZAH, CE ;

FAVIRE, FJ ;

BHAT, R ;

MENOCAL, SG ;

ANDREADAKIS, NC ;

HWANG, DM ;

KOZA, M ;

LEE, TP .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (12) :852-853

[10]

ZOU Y, IN PRESS APPL PHYS L

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