HIGH STATIC PERFORMANCE GAINAS-GAINASP SCH MQW 1.5 MU-M WAVELENGTH BURIED RIDGE STRIPE LASERS

被引：6

作者：

KAZMIERSKI, C

OUGAZZADEN, A

BLEZ, M

ROBEIN, D

LANDREAU, J

SERMAGE, B

BOULEY, JC

MIRCEA, A

机构：

[1] Centre National d’ Etudes des Telecommunications, Laboratoire de Bagneux, Bagneux

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1991年 / 27卷 / 06期

关键词：

D O I：

10.1109/3.90006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The superiority of MQW over bulk material for highly performant static-operation long wavelength laser fabrication has been experimentally demonstrated. Using a highly uniform MOVPE growth, an optimized simple SCH MQW layer stack, and the BRS structure, we show a set of improved static performances over any bulk or unstrained MQW long wavelength laser. An extremely low threshold below 2 mA has been obtained in short cavity lasers. In the case of 1 mm cavity lasers, the threshold current has been only 10.6 mA, and 110 mW CW maximum optical power has been observed using 90%/10% reflectivity coatings.

引用

页码：1794 / 1797

页数：4

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