HIGH-TEMPERATURE OPERATION OF LATTICE MATCHED AND STRAINED INGAAS-INP QUANTUM-WELL LASERS

被引：19

作者：

TEMKIN, H

TANBUNEK, T

LOGAN, RA

CEBULA, DA

SERGENT, AM

机构：

[1] AT&T Bell Laboratories, Murray Hill, NJ

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 02期

关键词：

D O I：

10.1109/68.76853

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe the temperature dependence of lattice matched and strained InGaAs-InP quantum well lasers operating between 1.48 and 1.56-mu-m. Devices grown under tensile and compressive strain, with an In concentration in the range of 0.43 < x < 0.66, show low threshold currents and internal losses of 7-12 cm-1. Short quantum well lasers with both facets high reflection coated exhibit low threshold currents of < 3 mA and operate up to 110-degrees-C with a single T0 of 45-55-degrees. Highest power at elevated temperatures is achieved in 0.5-1 mm long devices with one high reflection coated facet.

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页码：100 / 102

页数：3

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