SHALLOW PTSI-SI SCHOTTKY-BARRIER CONTACTS FORMED BY A MULTILAYER METALLIZATION TECHNIQUE

被引:14
作者
TSAUR, BY
SILVERSMITH, DJ
MOUNTAIN, RW
HUNG, LS
LAU, SS
SHENG, TT
机构
[1] CALTECH,PASADENA,CA 91125
[2] BELL TEL LABS INC,MURRAY HILL,NJ 07974
关键词
D O I
10.1063/1.329428
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:5243 / 5246
页数:4
相关论文
共 7 条
[1]  
LEPSELTER MP, 1967, BELL SYST TECH J, V47, P196
[2]   EFFECT OF JUNCTION CURVATURE ON BREAKDOWN VOLTAGE IN SEMICONDUCTORS [J].
SZE, SM ;
GIBBONS, G .
SOLID-STATE ELECTRONICS, 1966, 9 (09) :831-&
[3]  
SZE SM, 1969, PHYSICS SEMICONDUCTO, pCH8
[4]  
Tu K. N., 1978, Thin films. Interdiffusion and reactions, P359
[5]   SHALLOW SILICIDE CONTACT [J].
TU, KN ;
HAMMER, WN ;
OLOWOLAFE, JO .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (03) :1663-1668
[6]   ALUMINUM-SILICIDE REACTIONS .1. DIFFUSION, COMPOUND FORMATION, AND MICROSTRUCTURE [J].
VANGURP, GJ ;
DAAMS, JLC ;
VANOOSTROM, A ;
AUGUSTUS, LJM ;
TAMMINGA, Y .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) :6915-6922
[7]   REACTION OF MO THIN-FILMS ON SI (100) SURFACES [J].
YANAGISAWA, S ;
FUKUYAMA, T .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (05) :1150-1156