SINGLE-QUANTUM-WELL STRAINED-LAYER INGAAS-INGAASP LASERS FOR THE WAVELENGTH RANGE FROM 1.43 TO 1.55-MU-M

被引：4

作者：

LIOU, KY

DENTAI, AG

BURROWS, EC

JOYNER, CH

BURRUS, CA

RAYBON, G

机构：

[1] AT&T Bell Laboratories, Crawford Hill Laboratory, Holmdel

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 04期

关键词：

D O I：

10.1109/68.82096

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have fabricated strained-layer single-quantum-well InGaAs-InGaAsP lasers using a novel self-aligned-contact ridge guide structure. The lasers operate with length and mirror reflectivities were chosen to achieve laser oscillation in the wavelength range from 1.43 to 1.55-mu-m. We show that a fiber amplifier pump laser at 1.47-mu-m wavelength and a transmission source laser at 1.55-mu-m wavelength can be fabricated from a single wafer grown by metal-organic vapor phase epitaxy.

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收藏

页码：311 / 313

页数：3

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