POWER DEPENDENCE OF THE LINEWIDTH ENHANCEMENT TERM IN SEMICONDUCTOR-LASERS

被引：4

作者：

ELSASSER, W

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 12期

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D O I：

10.1063/1.94657

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1126 / 1128

页数：3

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