A-SIH POSITION-SENSITIVE DETECTOR WITH STRIPED METAL-ELECTRODES

被引:10
作者
YAMAMOTO, T [1 ]
MURAKAMI, K [1 ]
TAKAYAMA, S [1 ]
ONO, Y [1 ]
机构
[1] SHIZUOKA UNIV,ELECTR RES INST,HAMAMATSU,SHIZUOKA 432,JAPAN
关键词
D O I
10.1016/0924-4247(92)80119-N
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A novel dual-axis tetralateral position-sensitive detector (PSD) has been fabricated with a hydrogenated amorphous silicon (a-Si:H) p-i-n structure. The a-Si:H film for a photocurrent generator is formed by a plasma-enhanced chemical vapour deposition (PECVD) method. The PSD has striped metal electrodes formed by a chromium resistive layer on its photosensitive surface. It is confirmed from the experimental data that the PSD has very good linearity with the detected positions for both axes and that it can determine the positions of two or more incident light spots simultaneously if they illuminate different electrode stripes.
引用
收藏
页码:193 / 196
页数:4
相关论文
共 7 条
[1]  
DUTTA AK, 1988, 7TH SENS S TOK, P233
[2]   LATERAL PHOTOEFFECT [J].
EMMONS, RB .
SOLID-STATE ELECTRONICS, 1967, 10 (05) :505-+
[3]   2-DIMENSIONAL POSITION-SENSITIVE PHOTODETECTOR WITH HIGH LINEARITY MADE WITH STANDARD IC-TECHNOLOGY [J].
NOORLAG, DJW ;
MIDDELHOEK, S .
IEE JOURNAL ON SOLID-STATE AND ELECTRON DEVICES, 1979, 3 (03) :75-82
[4]  
Ogita M., 1986, Transactions of the Institute of Electronics and Communication Engineers of Japan, Part C, VJ69C, P1193
[5]   A NEW SEMICONDUCTOR PHOTOCELL USING LATERAL PHOTOEFFECT [J].
WALLMARK, JT .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (04) :474-483
[6]   IMAGING TRANSFER DEVICES OPERATED BY PSD MODE A-SI P-I-N JUNCTIONS [J].
YAMAGUCHI, M ;
MURAKAMI, S ;
TODO, S ;
TAWADA, Y .
AMORPHOUS SILICON TECHNOLOGY - 1989, 1989, 149 :631-641
[7]  
YAMAMOTO T, 1990, 9TH SENS S JAP, P217