ROOM-TEMPERATURE OPERATION OF VISIBLE (LAMBDA=658.6 NM) INGAASP DH LASER-DIODES ON GAASP

被引：9

作者：

FUJII, S

SAKAI, S

UMENO, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1985年 / 24卷 / 07期

关键词：

D O I：

10.1143/JJAP.24.L551

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L551 / L552

页数：2

共 8 条

[1]

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[2] PULSED ROOM-TEMPERATURE OPERATION OF IN1-XGAXP1-ZASZ DOUBLE HETEROJUNCTION LASERS AT HIGH-ENERGY (6470 A, 1.916 EV) [J].

COLEMAN, JJ ;

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KEUNE, DL .

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[3] VERY SHORT WAVELENGTH (621.4 NM) ROOM-TEMPERATURE PULSED OPERATION OF INGAASP LASERS [J].

FUJIMOTO, A ;

YASUDA, H ;

SHIMURA, M ;

YAMASHITA, S .

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[4]

KAWANISHI H, 1984, JPN J APPL PHYS 1, V23, P128, DOI 10.1143/JJAP.23.128

[5] 626.2-NM PULSED OPERATION (300-K) OF AN ALGAINP DOUBLE HETEROSTRUCTURE LASER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

KOBAYASHI, K ;

HINO, I ;

SUZUKI, T .

APPLIED PHYSICS LETTERS, 1985, 46 (01) :7-9

[6]

OE K, 1984, J CRYST GROWTH, V64, P30

[7]

SASAKI A, 1980, JPN J APPL PHYS, V10, P1695

[8] LOW THRESHOLD CURRENT OPERATION OF VAPOR-GROWN 650-NM-BAND INGAASP INGAP DH LASERS [J].

USUI, A ;

MATSUMOTO, T ;

INAI, M ;

MITO, I ;

KOBAYASHI, K ;

WATANABE, H .

ELECTRONICS LETTERS, 1985, 21 (02) :54-56

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