626.2-NM PULSED OPERATION (300-K) OF AN ALGAINP DOUBLE HETEROSTRUCTURE LASER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：20

作者：

KOBAYASHI, K

HINO, I

SUZUKI, T

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 01期

关键词：

D O I：

10.1063/1.95804

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：7 / 9

页数：3

共 9 条

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ASAHI, H ;

KAWAMURA, Y ;

NAGAI, H .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) :4928-4931

[2]

CASEY HC, 1978, HETEROSTRUCTURE LA B

[3]

DUCHEMIN JP, 1983, I PHYS C SER, V45, P10

[4] ROOM-TEMPERATURE PULSED OPERATION OF ALGALNP GALNP ALGALNP DOUBLE HETEROSTRUCTURE VISIBLE-LIGHT LASER-DIODES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

HINO, I ;

GOMYO, A ;

KOBAYASHI, K ;

SUZUKI, T ;

NISHIDA, K .

APPLIED PHYSICS LETTERS, 1983, 43 (11) :987-989

[5]

HINO I, 1984, JPN J APPL PHYS, V23, pL747

[6]

HINO I, 1984, UNPUB J CRYST GROWTH

[7] 0.66 MU-M ROOM-TEMPERATURE OPERATION OF INGAAIP DH LASER-DIODES GROWN BY MBE [J].

KAWAMURA, Y ;

ASAHI, H ;

NAGAI, H ;

IKEGAMI, T .

ELECTRONICS LETTERS, 1983, 19 (05) :163-165

[8]

SUZUKI T, 1982, JPN J APPL PHYS 2, V21, pL731, DOI 10.1143/JJAP.21.L731

[9]

SUZUKI T, 1983, 30TH P SPRING M JAP, P631

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