LAYER-BY-LAYER EPITAXIAL-GROWTH OF A BI2SR2CUO6 THIN-FILM ON A BI2SR2CACU2O8 SINGLE-CRYSTAL

被引：35

作者：

MATSUMOTO, T ^{[1
]}

KAWAI, T ^{[1
]}

KITAHAMA, K ^{[1
]}

KAWAI, S ^{[1
]}

SHIGAKI, I ^{[1
]}

KAWATE, Y ^{[1
]}

机构：

[1] KOBE STEEL LTD,CTR SUPERCONDUCTING & CRYOGEN TECHNOL,NISHI KU,KOBE 65122,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 18期

关键词：

D O I：

10.1063/1.105006

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The epitaxial growth of a Bi2Sr2CuO6 (2201) thin film on a Bi2Sr2CaCu2O8 (2212) single crystal has been performed using computer-controlled laser molecular beam epitaxy. The surface of the 2212 single crystal used as the substrate is smooth and invariant under the growth condition at 640-degrees-C in NO2 pressure of 1 x 10(-5) mbar. The growth process of the 2201 film has been observed by in situ reflection high-energy electron diffraction (RHEED), and the layer-by-layer growth of the 2201 phase is confirmed by the oscillation of RHEED intensities. During the growth, a modulated surface structure which is characteristic of the Bi cuprate crystals is always present.

引用

页码：2039 / 2041

页数：3