CYCLOTRON-RESONANCE OF 2D ELECTRONS AT SI-DELTA-DOPED INSB LAYERS GROWN ON GAAS

被引：2

作者：

VANBOCKSTAL, L

MAHY, M

DEKEYSER, A

HOEKS, W

HERLACH, F

PEETERS, FM

VANDEGRAAF, W

BORGHS, G

机构：

[1] KATHOLIEKE UNIV LEUVEN,ESAT,B-3001 LOUVAIN,BELGIUM

[2] UNIV INSTELLING ANTWERP,DEPT NATUURKUNDE,B-2610 ANTWERP,BELGIUM

[3] INTERUNIV MICROELECTR CTR,B-3001 LOUVAIN,BELGIUM

来源：

PHYSICA B | 1995年 / 211卷 / 1-4期

关键词：

D O I：

10.1016/0921-4526(94)01095-I

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Cyclotron resonance (CR) of the electrons accumulated at sheets with heavy Si doping in InSb were observed using far infrared radiation. The angular dependence of the CR follows closely the 1/cos theta behaviour with some small deviations at high angles attributed to coupling between subbands. From the effective mass of the lowest subband, which is found to be 0.027m(o), the bottom of the lowest subband was determined to lie 125 meV below the Fermi level.

引用

页码：466 / 469

页数：4

共 5 条

[1] SELF-CONSISTENT RESULTS FOR A GAAS/ALXGA1-XAS HETEROJUNCTION .1. SUBBAND STRUCTURE AND LIGHT-SCATTERING SPECTRA [J].