GROWTH OF HETEROEPITAXIAL SIC FILMS BY PYROLYSIS OF VARIOUS ALKYL-SILICON COMPOUNDS

被引：54

作者：

AVIGAL, Y

SCHIEBER, M

LEVIN, R

机构：

[1] HEBREW UNIV,SCH APPL SCI & TECHNOL,DEPT MAT SCI,JERUSALEM,ISRAEL

[2] NUCL RES CTR,BEER SHEVA,ISRAEL

来源：

关键词：

D O I：

10.1016/0022-0248(74)90302-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：188 / 192

页数：5

共 23 条

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[14]

LEVIN RL, TO BE PUBLISHED

[15]

OCONNOR JR, 1960, SILICON CARBIDE HIGH, P357

[16]

RAICHOUDHURY P, 1969, J ELECTROCHEM SOC, V116, P1441

[17]

SIRTLE E, 1969, Patent No. 3476640

[18] FORMATION OF BETA-SIC FROM PYROLYSIS OF CH3SICL3 IN HYDROGEN [J].

VANKEMENADE, AW ;

STEMFOORT, CF .

WAGNER, RS ;

ELLIS, WC .

[20]

WARIG CH, 1940, T FARADAY SOC, P1142