First principles simulations of silicon nanoindentation

被引:48
作者
Perez, R [1 ]
Payne, MC [1 ]
Simpson, AD [1 ]
机构
[1] UNIV EDINBURGH,EDINBURGH PARALLEL COMP CTR,EDINBURGH EH9 3JZ,MIDLOTHIAN,SCOTLAND
关键词
D O I
10.1103/PhysRevLett.75.4748
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Total-Energy pseudopotential calculations are used to study the onset and development of plasticity in nanoindentation experiments. Plastic flow of atoms towards interstitial positions and extrusion of material towards the tip walls, stabilized by the adhesive interactions with the tip, are the dominant mechanisms. The delocalization of the charge induced by the stress in the elastically compressed structure triggers these plastic deformations. The onset of irreversible damage is related to the plastic deformation of the secund double layer of the Si(111) surface.
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收藏
页码:4748 / 4751
页数:4
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