MOLECULAR-DYNAMICS OF SILICON INDENTATION

被引：69

作者：

KALLMAN, JS

HOOVER, WG

HOOVER, CG

DEGROOT, AJ

LEE, SM

WOOTEN, F

机构：

[1] Department of Applied Science Davis-Livermore, Lawrence Livermore National Laboratory, Livermore

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 13期

关键词：

D O I：

10.1103/PhysRevB.47.7705

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We use nonequilibrium molecular dynamics to simulate the elastic-plastic deformation of silicon under tetrahedral nanometer-sized indentors. The results are described in terms of a rate-dependent and temperature-dependent phenomenological yield strength. We follow the structural change during indentation with a computer technique that allows us to model the dynamic simulation of diffraction patterns.

引用

页码：7705 / 7709

页数：5

共 14 条

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