REFLECTIVITY AND PHOTOREFLECTIVITY IN SUPERLATTICES AND QUANTUM-WELLS

被引:9
作者
IVCHENKO, EL
KOCHERESHKO, VP
URALTSEV, IN
YAKOVLEV, DR
机构
[1] A. F. Ioffe Physico-Technical Institute, Academy of Sciences of the Ussr
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1990年 / 161卷 / 01期
关键词
D O I
10.1002/pssb.2221610121
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Oblique‐incidence reflectance and photoreflectance of heterostructures near the resonance frequencies of excitons confined in a single quantum well are studied. Under illumination with above barrier band gap light at low temperature, the relative change ΔR/R of the reflectivity is found to reach 10% and even more. The experimental results can be explained by a photo‐induced decrease in the exciton damping and attributed to neutralization of the barrier impurity centres under the illumination. Copyright © 1990 WILEY‐VCH Verlag GmbH & Co. KGaA
引用
收藏
页码:217 / 221
页数:5
相关论文
共 8 条
[1]   EXCITON LONGITUDINAL-TRANSVERSE SPLITTING IN GAAS/ALGAAS SUPERLATTICES AND MULTIPLE QUANTUM WELLS [J].
IVCHENKO, EL ;
KOCHERESHKO, VP ;
KOPEV, PS ;
KOSOBUKIN, VA ;
URALTSEV, IN ;
YAKOVLEV, DR .
SOLID STATE COMMUNICATIONS, 1989, 70 (05) :529-534
[2]  
IVCHENKO EL, 1988, SOV PHYS SEMICOND, V22, P497
[3]  
KOPEV PS, 1987, JETP LETT+, V46, P89
[4]   PHOTOREFLECTANCE MODULATION MECHANISMS IN GAAS-ALXGA1-XAS MULTIPLE QUANTUM-WELLS [J].
SHANABROOK, BV ;
GLEMBOCKI, OJ ;
BEARD, WT .
PHYSICAL REVIEW B, 1987, 35 (05) :2540-2543
[5]   PHOTOREFLECTANCE OF GAAS AND GA0.82AL0.18AS AT ELEVATED-TEMPERATURES UP TO 600-DEGREE-C [J].
SHEN, H ;
PAN, SH ;
HANG, Z ;
LENG, J ;
POLLAK, FH ;
WOODALL, JM ;
SACKS, RN .
APPLIED PHYSICS LETTERS, 1988, 53 (12) :1080-1082
[6]  
SHEN H, 1987, PHYS REV B, V36, P3489
[7]  
SHEN HM, IN PRESS
[8]   EXCITON PARAMETERS AND ELECTRON MINIBAND STRUCTURE OF GAAS/ALGAAS SUPERLATTICES [J].
URALTSEV, IN ;
IVCHENKO, EL ;
KOPEV, PS ;
KOCHERESHKO, VP ;
YAKOVLEV, DR .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1988, 150 (02) :673-678