HYDROGEN RADICAL ASSISTED CHEMICAL VAPOR-DEPOSITION OF ZNSE

被引：25

作者：

ODA, S ^{[1
]}

KAWASE, R ^{[1
]}

SATO, T ^{[1
]}

SHIMIZU, I ^{[1
]}

KOKADO, H ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,IMAGING SCI & ENGN LAB,MIDORI KU,YOKOHAMA,KANAGAWA 227,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 01期

关键词：

ELECTRIC CONDUCTIVITY - HYDROGEN - MOLECULES - PHOTOCONDUCTIVITY - SEMICONDUCTING GALLIUM ARSENIDE;

D O I：

10.1063/1.96752

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hydrogen radicals are employed in the growth of ZnSe. They react with starting gases to form long-lifetime precursors for deposition. The major advantages of hydrogen radical assisted chemical vapor deposition over the existing methods include (1) low-temperature growth, (2) plasma-free substrate, (3) selective precursor formation, (4) substrate cleaning effect, (5) rearrangement of atoms on the growing surface, and (6) passivation of grain boundaries or dangling bonds. Highly (111) axis oriented ZnSe films have been prepared on glass substrates at 200 degree C. The temperature dependence of the electrical conductivity in the dark and the photoconductive response suggest low density of traps. Epitaxial ZnSe films on GaAs substrates have been obtained at 200 degree C.

引用

页码：33 / 35

页数：3

共 6 条

[1] KINETICS OF ATOMIC-HYDROGEN REACTIONS IN GAS-PHASE [J].

JONES, WE ;

MACKNIGH.SD ;

TENG, L .

CHEMICAL REVIEWS, 1973, 73 (05) :407-440

[2]

ODA S, 1985, UNPUB J NONCRYST SOL

[3] PLASMA-ENHANCED METALORGANIC CHEMICAL VAPOR-DEPOSITION OF C-AXIS ORIENTED AND EPITAXIAL-FILMS OF ZNO AT LOW SUBSTRATE TEMPERATURES [J].

SHIOSAKI, T ;

YAMAMOTO, T ;

YAGI, M ;

KAWABATA, A .

APPLIED PHYSICS LETTERS, 1981, 39 (05) :399-401

[4] LASER-INDUCED DEPOSITION OF ZINC-OXIDE [J].

SOLANKI, R ;

COLLINS, GJ .

APPLIED PHYSICS LETTERS, 1983, 42 (08) :662-663

[5] ORGANOMETALLIC VAPOR-DEPOSITION OF EPITAXIAL ZNSE FILMS ON GAAS SUBSTRATES [J].

STUTIUS, W .

APPLIED PHYSICS LETTERS, 1978, 33 (07) :656-658

[6] GROWTH AND DOPING OF ZNSE AND ZNSXSE1-X BY ORGANO-METALLIC CHEMICAL VAPOR-DEPOSITION [J].

STUTIUS, W .

JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) :1-9

← 1 →