OPTICAL AND PHOTOCHEMICAL FACTORS WHICH INFLUENCE ETCHING OF POLYMERS BY ABLATIVE PHOTODECOMPOSITION

[1] DIRECT ETCHING OF POLYMERIC MATERIALS USING A XECL LASER [J]. APPLIED PHYSICS LETTERS, 1983, 43 (08) : 717 - 719

[2] Calvert J. G., 1966, PHOTOCHEMISTRY

[3] SPECTROSCOPIC STUDIES OF ARF LASER PHOTOABLATION OF PMMA [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1985, 36 (01): : 27 - 30

[4] MICROSCOPIC MODEL FOR THE ABLATIVE PHOTODECOMPOSITION OF POLYMERS BY FAR-ULTRAVIOLET RADIATION (193 NM) [J]. APPLIED PHYSICS LETTERS, 1984, 44 (09) : 849 - 851

[5] SELF-DEVELOPING RESIST WITH SUBMICROMETER RESOLUTION AND PROCESSING STABILITY [J]. APPLIED PHYSICS LETTERS, 1983, 43 (01) : 74 - 76

[6] GORODETSKY G, UNPUB APPL PHYS LETT

[7] HESS WM, 1984, IND PHOTOG, V33, P42

[8] JELLINEK HHG, 1984, J PHYS CHEM-US, V88, P3048, DOI 10.1021/j150658a024

[9] LIN BJ, 1981, P INT C MICROLITHOGR

[10] Murahara M., 1983, Oyo Buturi, V52, P83

[1] DIRECT ETCHING OF POLYMERIC MATERIALS USING A XECL LASER [J]. APPLIED PHYSICS LETTERS, 1983, 43 (08) : 717 - 719

[2] Calvert J. G., 1966, PHOTOCHEMISTRY

[3] SPECTROSCOPIC STUDIES OF ARF LASER PHOTOABLATION OF PMMA [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1985, 36 (01): : 27 - 30

[4] MICROSCOPIC MODEL FOR THE ABLATIVE PHOTODECOMPOSITION OF POLYMERS BY FAR-ULTRAVIOLET RADIATION (193 NM) [J]. APPLIED PHYSICS LETTERS, 1984, 44 (09) : 849 - 851

[5] SELF-DEVELOPING RESIST WITH SUBMICROMETER RESOLUTION AND PROCESSING STABILITY [J]. APPLIED PHYSICS LETTERS, 1983, 43 (01) : 74 - 76

[6] GORODETSKY G, UNPUB APPL PHYS LETT

[7] HESS WM, 1984, IND PHOTOG, V33, P42

[8] JELLINEK HHG, 1984, J PHYS CHEM-US, V88, P3048, DOI 10.1021/j150658a024

[9] LIN BJ, 1981, P INT C MICROLITHOGR

[10] Murahara M., 1983, Oyo Buturi, V52, P83