THE CHARACTERIZATION OF SELECTIVE PROTON DAMAGE ON GAAS SOLAR-CELLS

被引：17

作者：

ALIYU, YH

MORGAN, DV

BUNCE, RW

机构：

[1] School of Electrical, Electronic, and Systems Engineering, University of Wales, College of Cardiff

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1993年 / 135卷 / 01期

关键词：

D O I：

10.1002/pssa.2211350108

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Selective ion bombardment damage was induced on n/n+ GaAs Schottky barrier solar cell structure using several proton energies and doses. The damage in the surface, interface, and the bulk regions were characterised by I-V, C-V, and thermally stimulated current technique (TSC). A correlation between the selective damages and the nature of the defects and their location was obtained.

引用

页码：119 / 132

页数：14

共 13 条

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[2]

ALIYU YH, 1991, THESIS U WALES, P75

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