THEORETICAL AND EXPERIMENTAL STUDY OF RECOMBINATION IN SILICON P-N-JUNCTIONS

被引：43

作者：

ASHBURN, P ^{[1
]}

MORGAN, DV ^{[1
]}

HOWES, MJ ^{[1
]}

机构：

[1] UNIV LEEDS,DEPT ELECT & ELECTR ENGN,LEEDS LS1 3EX,ENGLAND

来源：

SOLID-STATE ELECTRONICS | 1975年 / 18卷 / 06期

关键词：

D O I：

10.1016/0038-1101(75)90035-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：569 / 577

页数：9

共 15 条

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[6]

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[7] SELF-CONSISTENT ITERATIVE SCHEME FOR 1-DIMENSIONAL STEADY STATE TRANSISTOR CALCULATIONS [J].

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[8]

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[9]

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[10] ELECTRICAL-ACTIVITY OF NEUTRON DAMAGE CENTERS IN SILICON DIODES [J].

MORGAN, DV ;

ASHBURN, P .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1974, 22 (01) :35-38

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