CVD SILICON STRUCTURES FORMED BY AMORPHOUS AND CRYSTALLINE GROWTH

被引:8
作者
BEERS, AM
HINTZEN, HTJM
SCHAEKEN, HG
BLOEM, J
机构
关键词
D O I
10.1016/0022-0248(83)90342-1
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
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页码:563 / 571
页数:9
相关论文
共 25 条
[1]   TIME-RESOLVED OPTICAL REFLECTIVITY AND EMISSIVITY DURING AND AFTER CHEMICAL VAPOR-DEPOSITION OF AMORPHOUS AND CRYSTALLINE SILICON [J].
BEERS, AM ;
HINTZEN, HTJM ;
BLOEM, J .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (06) :1426-1433
[2]   TEMPERATURE-DEPENDENCE OF THE GROWTH-RATE OF SILICON PREPARED THROUGH CHEMICAL VAPOR-DEPOSITION FROM SILANE [J].
BEERS, AM ;
BLOEM, J .
APPLIED PHYSICS LETTERS, 1982, 41 (02) :153-155
[3]  
BEERS AM, 1983, 4TH P EUR C CHEM VAP, P211
[4]  
BEERS AM, 1983, 2ND P EUR C SOL STAT, P177
[5]  
BOGENSCHUTZ AF, 1967, ATZPRAXIS HALBLEITER, P88
[6]   CHANGE OF ETCH RATE ASSOCIATED WITH AMORPHOUS TO CRYSTALLINE TRANSITION IN CVD LAYERS OF SILICON [J].
BOXALL, BA .
SOLID-STATE ELECTRONICS, 1977, 20 (10) :873-874
[7]  
CLASSEN WAP, 1981, THESIS U NIJMEGEN
[8]  
DELHEZ R, 1981, I PHYS C SER, V60, P277
[9]   GROWTH OF POLYCRYSTALLINE SILICON FILMS - GRAIN-SIZE [J].
EMMANUEL, A ;
POLLOCK, HM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (11) :1586-1591
[10]  
HARBEKE G, UNPUB J ELECTROCHEM