DEFECT CALCULATIONS IN SEMICONDUCTORS - THEORETICAL PRINCIPLES AS ILLUSTRATED BY CURRENT CALCULATIONS

被引：10

作者：

STONEHAM, AM

机构：

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1985年 / 51卷 / 02期

关键词：

D O I：

10.1080/13642818508240560

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：161 / 176

页数：16

共 68 条

[1]

[Anonymous], 1982, EXCITONS

[2] THEORY OF ENHANCED MIGRATION OF INTERSTITIAL ALUMINUM IN SILICON [J].

BARAFF, GA ;

SCHLUTER, M ;

ALLAN, G .

PHYSICAL REVIEW LETTERS, 1983, 50 (10) :739-742

[3] NEED FOR A NEW METASTABLE STATE OF GAP-O- IN THE DEAN-HENRY-KUKIMOTO MODEL OF GAP-O [J].

BARAFF, GA ;

KANE, EO ;

SCHLUTER, M .

PHYSICAL REVIEW LETTERS, 1981, 47 (08) :601-604

[4]

BARAFF GA, 1980, PHYS REV B, V21, P5562

[5]

BARTRAM RH, 1983, SEMICOND INSUL, V5, P297

[6] LUMINESCENCE AND ABSENCE OF LUMINESCENCE OF F-CENTERS [J].

BARTRAM, RH ;

STONEHAM, AM .

SOLID STATE COMMUNICATIONS, 1975, 17 (12) :1593-1598

[7] APPLICATION OF QUANTUM-DEFECT METHOD TO OPTICAL TRANSITIONS INVOLVING DEEP EFFECTIVE-MASS-LIKE IMPURITIES IN SEMICONDUCTORS [J].

BEBB, HB .

PHYSICAL REVIEW, 1969, 185 (03) :1116-&

[8] NEW MECHANISM FOR INTERSTITIAL MIGRATION [J].

BOURGOIN, JC ;

CORBETT, JW .

PHYSICS LETTERS A, 1972, A 38 (02) :135-&

[9] IONICITY IN SOLIDS [J].

CATLOW, CRA ;

STONEHAM, AM .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (22) :4321-4338

[10] COLOUR CENTRES IN IRRADIATED DIAMONDS .1. [J].

COULSON, CA ;

KEARSLEY, MJ .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1957, 241 (1227) :433-454

← 1 2 3 4 5 6 7 →