DEFECT CALCULATIONS IN SEMICONDUCTORS - THEORETICAL PRINCIPLES AS ILLUSTRATED BY CURRENT CALCULATIONS

被引：10

作者：

STONEHAM, AM

机构：

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1985年 / 51卷 / 02期

关键词：

D O I：

10.1080/13642818508240560

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：161 / 176

页数：16

共 68 条

[11] NEW ASPECTS OF THE OXYGEN DONOR IN GALLIUM-PHOSPHIDE [J].

DEAN, PJ ;

SKOLNICK, MS ;

UIHLEIN, C ;

HERBERT, DC .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (11) :2017-2051

[12] RECOMBINATION-ENHANCED DEFECT REACTIONS STRONG NEW EVIDENCE FOR AN OLD CONCEPT IN SEMICONDUCTORS [J].

DEAN, PJ ;

CHOYKE, WJ .

ADVANCES IN PHYSICS, 1977, 26 (01) :1-30

[13] CRITERION FOR THE OCCURRENCE OF LUMINESCENCE [J].

DEXTER, DL ;

KLICK, CC ;

RUSSELL, GA .

PHYSICAL REVIEW, 1955, 100 (02) :603-605

[14]

FAIR RB, 1981, IMPURITY DOPING PROC, P320

[15] HIGHER DONOR EXCITED STATES FOR PROLATE-SPHEROID CONDUCTION BANDS - A REEVALUATION OF SILICON AND GERMANIUM [J].

FAULKNER, RA .

PHYSICAL REVIEW, 1969, 184 (03) :713-&

[16] DEFECT REACTIONS IN GAP-(ZN,O) [J].

FEENSTRA, RM ;

MCGILL, TC .

PHYSICAL REVIEW LETTERS, 1981, 47 (13) :925-927

[17] THE ENERGY OF FORMATION OF ALKALI-METAL ION INTERSTITIALS IN ZINC SELENIDE [J].

HARDING, JH .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (33) :5049-5054

[18] DEFECT ENERGIES IN ZNSE [J].

HARDING, JH ;

STONEHAM, AM .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (22) :4649-4659

[19] MAGNETO-OPTICAL STUDIES OF EXCITED STATES OF C1 DONOR IN CDS [J].

HENRY, CH ;

NASSAU, K .

PHYSICAL REVIEW B, 1970, 2 (04) :997-&

[20]

Hirsch P. B., 1981, Defects in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P257

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