HYDROSTATIC-PRESSURE EFFECT ON SWITCHING PHENOMENA IN COPPER-CONTAINING PLASMA THIN-FILMS

被引：5

作者：

ELALLAM, T ^{[1
]}

AKINNIFESI, J ^{[1
]}

DESPAX, B ^{[1
]}

THEGIAM, H ^{[1
]}

SAIDI, M ^{[1
]}

BENDAOUD, M ^{[1
]}

机构：

[1] UNIV SCI TECHNOL HB,DIELECT LAB,ALGIERS,ALGERIA

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 06期

关键词：

D O I：

10.1063/1.357391

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Copper-containing polymer thin films sandwiched between metal electrodes were prepared by plasma polymerization of metal compounds in a radio-frequency glow discharge. Current-voltage (I-V) characteristics reveal the switching phenomenon, characterized by an abrupt impedance variation from the off state (about 10(8)-10(10) Omega) to the on state (about 10-10(2) Omega). The I-V characteristics exhibit an ohmic behavior in the on state. The pressure dependence of the switching threshold voltage (V-th) in the range of 0.1-80 MPa was investigated. It was assumed that V-th variations were due to the sample compression effect by the pressure. Results are analyzed by using Abeles' model.

引用

页码：3869 / 3874

页数：6

共 33 条

[1] MEMORY SWITCHING EFFECTS IN LOCALLY GROWN POLYCRYSTALLINE SILICON FILMS [J].