MEMORY SWITCHING EFFECTS IN LOCALLY GROWN POLYCRYSTALLINE SILICON FILMS

被引：4

作者：

ABDULLAYEV, AG

KASIMOV, FD

VETKHOV, VA

MAMIKONOVA, VM

机构：

来源：

THIN SOLID FILMS | 1984年 / 112卷 / 02期

关键词：

D O I：

10.1016/0040-6090(84)90489-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：121 / 125

页数：5

共 11 条

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[2]

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[6] THRESHOLD AND MEMORY SWITCHING IN POLYCRYSTALLINE SILICON [J].

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[9]

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[10] A NOVEL MOS PROM USING A HIGHLY RESISTIVE POLY-SI RESISTOR [J].

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