DEEP TRAPS IN POLYSILICON SOLAR-CELLS

被引:9
作者
CRIADO, A
ALONSO, B
PIQUERAS, J
机构
关键词
D O I
10.1049/el:19780418
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:622 / 623
页数:2
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共 7 条
[1]   SCHOTTKY-BARRIER CAPACITANCE MEASUREMENTS FOR DEEP LEVEL IMPURITY DETERMINATION [J].
BLEICHER, M ;
LANGE, E .
SOLID-STATE ELECTRONICS, 1973, 16 (03) :375-380
[2]  
CRIADO A, 1977, 7TH EUR SOL STAT DEV
[3]   INFLUENCE OF DEEP TRAPS ON MEASUREMENT OF FREE-CARRIER DISTRIBUTIONS IN SEMICONDUCTORS BY JUNCTION CAPACITANCE TECHNIQUES [J].
KIMERLING, LC .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) :1839-1845
[4]  
KOKIMOTO H, 1973, PHYS REV B, V7, P2486
[5]   FAST CAPACITANCE TRANSIENT APPARATUS - APPLICATION TO ZNO AND O CENTERS IN GAP PARANORMAL JUNCTIONS [J].
LANG, DV .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3014-3022
[6]   SOLAR-CELLS FROM POLYSILICON RODS [J].
MARTINEZ, J ;
ALONSO, B ;
CRIADO, A ;
PIQUERAS, J .
ELECTRONICS LETTERS, 1976, 12 (25) :671-672
[7]   EXPERIMENTS ON ORIGIN OF PROCESS-INDUCED RECOMBINATION CENTERS IN SILICON [J].
SAH, CT ;
WANG, CT .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) :1767-1776