CALCULATION OF HOLE MOBILITY IN DOPED SIGE ALLOYS USING A MONTE-CARLO METHOD WITH A BOND ORBITAL BAND-STRUCTURE

被引：7

作者：

LIOU, TS

WANG, TH

CHANG, CY

机构：

[1] Department of Electronics Engineering, Institute of Electronics, National Chiao-Tung University, Hsin-Chu

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 08期

关键词：

D O I：

10.1063/1.357244

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hole mobility in strained Si1-xGex/Si(001) layers is calculated as functions of temperature and doping concentration for various Ge contents using a Monte Carlo technique. In the Monte Carlo simulation, the band structure is computed by using a bond orbital model, which combines the k.p and the tight-binding methods with a strain Hamiltonian. The Fermi-Dirac distribution is employed for heavily doped impurity scattering. The alloy interaction potential of 1.0 eV for the Monte Carlo model is obtained by fitting the measured velocity-field characteristics in strained Si1-xGex alloys. The calculated hole mobilities compare well with experimental results. The strain effect on hole transport is also evaluated.

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页码：4749 / 4752

页数：4

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