INSTRUMENT FOR MEASURING MAGNETOMICROWAVE KERR EFFECT IN SEMICONDUCTORS

被引:26
作者
BRODWIN, ME
VERNON, RJ
机构
关键词
D O I
10.1063/1.1718150
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:1129 / &
相关论文
共 7 条
[1]  
BRODWIN ME, 1961, B AM PHYS SOC, V6, P427
[2]   DEPENDENCE OF FREE-CARRIER FARADAY ELLIPTICITY IN SEMICONDUCTORS ON SCATTERING MECHANISMS [J].
FURDYNA, JK ;
BRODWIN, ME .
PHYSICAL REVIEW, 1961, 124 (03) :740-&
[3]   MICROWAVE FARADAY EFFECT IN SILICON AND GERMANIUM [J].
FURDYNA, JK ;
BROERSMA, S .
PHYSICAL REVIEW, 1960, 120 (06) :1995-2003
[4]  
MONTGOMERY CG, 1948, PRINCIPLES MICROWAVE, P459
[5]   FARADAY EFFECT IN GERMANIUM AT ROOM TEMPERATURE [J].
RAU, RR ;
CASPARI, ME .
PHYSICAL REVIEW, 1955, 100 (02) :632-639
[6]  
STEPHEN MJ, 1959, J PHYS CHEM SOLIDS, V9, P43
[7]  
SUHL H, 1953, PHYS REV, V92, P858