BIAS-DEPENDENT OSCILLATIONS IN 10 MU-M-LONG TRANSFERRED-ELECTRON OSCILLATORS

被引：2

作者：

GRUBIN, HL ^{[1
]}

机构：

[1] UNITED AIRCRAFT CORP,RES LABS,E HARTFORD,CT 06108

来源：

关键词：

D O I：

10.1049/el:19740294

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：371 / 372

页数：2

共 7 条

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[4] FREEMAN KR, 1972, IEEE T ELECTRON DEVI, VED19, P62
[5] INFLUENCE OF BOUNDARY CONDITIONS ON CURRENT INSTABILITIES IN GAAS
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SOLOMON, PR
GRUBIN, HL
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1969, 13 (05) : 587 - &
[6] ANALYSIS OF BULK NEGATIVE DIFFERENTIAL MOBILITY ELEMENT IN A CIRCUIT CONTAINING REACTIVE ELEMENTS
SOLOMON, PR
SHAW, MP
GRUBIN, HL
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (01) : 159 - +
[7] TALWAR AK, 3 P BIENN CORN EL EN, P387