SURFACE RELAXATION BY THE KEATING MODEL - A COMPARISON WITH ABINITIO CALCULATIONS AND X-RAY-DIFFRACTION EXPERIMENTS

被引：29

作者：

PEDERSEN, JS

机构：

来源：

SURFACE SCIENCE | 1989年 / 210卷 / 1-2期

关键词：

D O I：

10.1016/0039-6028(89)90114-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：238 / 250

页数：13

共 25 条

[1] THEORY OF RECONSTRUCTION INDUCED SUBSURFACE STRAIN - APPLICATION TO SI(100) [J].

APPELBAUM, JA ;

HAMANN, DR .

SURFACE SCIENCE, 1978, 74 (01) :21-33

[2] THEORY OF THE SILICON VACANCY - AN ANDERSON NEGATIVE-U SYSTEM [J].

BARAFF, GA ;

KANE, EO ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1980, 21 (12) :5662-5686

[3] X-RAY-DIFFRACTION STUDY OF THE GE(001) RECONSTRUCTED SURFACE [J].

EISENBERGER, P ;

MARRA, WC .

PHYSICAL REVIEW LETTERS, 1981, 46 (16) :1081-1084

[4]

GREY F, 1987, STRUCTURE SURFACES, V2, P292

[5] ABINITIO CALCULATION OF THE PHONON FREQUENCIES IN SILICON USING SMALL ATOMIC CLUSTERS [J].

JONES, R .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1987, 20 (14) :L271-L273

[6] SEMICONDUCTOR SURFACE STRUCTURES [J].

Kahn, A. .

SURFACE SCIENCE REPORTS, 1983, 3 (4-5) :193-300

[7] EFFECT OF INVARIANCE REQUIREMENTS ON ELASTIC STRAIN ENERGY OF CRYSTALS WITH APPLICATION TO DIAMOND STRUCTURE [J].

KEATING, PN .

PHYSICAL REVIEW, 1966, 145 (02) :637-&

[8] ELEASTIC PROPERTIES OF ZNS STRUCTURE SEMICONDUCTORS [J].

MARTIN, RM .

PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (10) :4005-+

[9]

Northrup J. E., 1987, 18th International Conference on the Physics of Semiconductors, P61

[10] ORIGIN OF SURFACE-STATES ON SI(111)(7X7) [J].

NORTHRUP, JE .

PHYSICAL REVIEW LETTERS, 1986, 57 (01) :154-157

← 1 2 3 →