ANALYSIS OF TRAPPING AND RECOMBINATION EFFECTS IN PHOTOELECTROCHEMICAL PROCESSES AT SEMICONDUCTOR ELECTRODES - INVESTIGATIONS AT N-GAAS

被引：77

作者：

SCHRODER, K

MEMMING, R

机构：

[1] Univ Hamburg, Inst fuer, Physikalische Chemie, Hamburg, West, Ger, Univ Hamburg, Inst fuer Physikalische Chemie, Hamburg, West Ger

来源：

BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS | 1985年 / 89卷 / 04期

关键词：

D O I：

10.1002/bbpc.19850890407

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：385 / 392

页数：8

共 21 条

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