AR+ LASER ANNEALING AND ETCHING OF HYDROGENATED AMORPHOUS-CARBON FILMS

被引：3

作者：

ARMEYEV, VY

CHAPLIEV, NI

LOUBNIN, EN

MIKHAILOV, VI

RALCHENKO, VG

STRELNITSKY, VE

机构：

[1] General Physics Institute, U.S.S.R. Academy of Sciences, Moscow, 117942

来源：

SURFACE & COATINGS TECHNOLOGY | 1991年 / 47卷 / 1-3期

关键词：

D O I：

10.1016/0257-8972(91)90292-5

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Annealing and etching of hydrogenated amorphous carbon films were performed in air and oxygen with a continuous wave Ar+ laser in direct writing mode. Raman spectroscopy, surface profilometry and secondary ion mass spectroscopy were used to study structure and composition changes that accompanied a graphitization process. Conductive lines and channels of micrometer-scale size were created in the films. Etching rates up to 100-mu-m s-1 were achieved.

引用

页码：279 / 286

页数：8

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