CHARACTERIZATION OF POLY-BUFFERED LOCOS IN MANUFACTURING ENVIRONMENT

[1] APPELS JA, 1970, PHILIPS RES REP, V25, P118

[2] APPELS JA, 1971, PHILIPS RES REPT, V26, P166

[3] CHAPMAN RA, 1988, 1987 P IEDM INT EL D, P362

[4] DAROGONA FS, 1972, J ELECTROCHEM SOC, V119, P948

[5] HAVEMANN RH, 1985, Patent No. 4541167

[6] HOSHI N, 1986, DEV P IEDM INT EL DE, P300

[7] JENKINS MW, 1976, ELECTROCHEMICAL SOC, V761, P317

[8] FORMATION OF SILICON-NITRIDE AT A SI-SIO2 INTERFACE DURING LOCAL OXIDATION OF SILICON AND DURING HEAT-TREATMENT OF OXIDIZED SILICON IN NH3 GAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (07) : 1117 - 1120

[9] SIRTL E, 1961, Z METALLKD, V52, P529

[10] TENG CW, 1986, ELECTROCHEMICAL SOC, P515

[1] APPELS JA, 1970, PHILIPS RES REP, V25, P118

[2] APPELS JA, 1971, PHILIPS RES REPT, V26, P166

[3] CHAPMAN RA, 1988, 1987 P IEDM INT EL D, P362

[4] DAROGONA FS, 1972, J ELECTROCHEM SOC, V119, P948

[5] HAVEMANN RH, 1985, Patent No. 4541167

[6] HOSHI N, 1986, DEV P IEDM INT EL DE, P300

[7] JENKINS MW, 1976, ELECTROCHEMICAL SOC, V761, P317

[8] FORMATION OF SILICON-NITRIDE AT A SI-SIO2 INTERFACE DURING LOCAL OXIDATION OF SILICON AND DURING HEAT-TREATMENT OF OXIDIZED SILICON IN NH3 GAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (07) : 1117 - 1120

[9] SIRTL E, 1961, Z METALLKD, V52, P529

[10] TENG CW, 1986, ELECTROCHEMICAL SOC, P515