QUENCHED-IN, FAST-DIFFUSING DEFECTS IN SILICON STUDIED BY THE PERTURBED ANGULAR-CORRELATION METHOD

被引：3

作者：

REISLOHNER, U ^{[1
]}

DEUBLER, S ^{[1
]}

DOHLUS, P ^{[1
]}

FORKEL, D ^{[1
]}

MEIER, J ^{[1
]}

PLANK, H ^{[1
]}

WOLF, H ^{[1
]}

WITTHUHN, W ^{[1
]}

PENSL, G ^{[1
]}

机构：

[1] UNIV ERLANGEN NURNBERG,INST ANGEW PHYS,W-8520 ERLANGEN,GERMANY

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1989年 / 4卷 / 1-4期

关键词：

D O I：

10.1016/0921-5107(89)90221-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：83 / 86

页数：4

共 14 条

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[9]

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[10] NEUTRALIZATION OF ACCEPTORS AND FORMATION OF AGGLOMERATES IN SILICON-WAFERS DUE TO INTRINSIC POINT-DEFECTS CREATED BY CHEMOMECHANICAL POLISHING AND BY QUENCHING [J].

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