INFLUENCE OF INHOMOGENEOUS INJECTION ON SIDEMODE SUPPRESSION IN STRONGLY COUPLED DFB SEMICONDUCTOR-LASERS

被引：24

作者：

BANDELOW, U

WENZEL, H

WUNSCHE, HJ

机构：

[1] Humboldt-University, Department of Physics, D-O-1040 Berlin

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 14期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19920841

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A longitudinally nonuniform injection counteracting the spatial hole burning in quarter-wavelength shifted DFB semiconductor lasers with strong coupling has been obtained from a quasi-three-dimensional model. This effect enlarges with falling series resistances. It substantially lowers the degradation of sidemode suppression compared with former models that assume homogeneous injection.

引用

页码：1324 / 1326

页数：3

共 6 条

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