MANY-BODY TREATMENT ON THE MODULATION RESPONSE IN A STRAINED QUANTUM-WELL SEMICONDUCTOR-LASER MEDIUM

被引:31
作者
CHOW, WW
PEREIRA, MF
KOCH, SW
机构
[1] UNIV ARIZONA,CTR OPT SCI,TUCSON,AZ 85721
[2] UNIV ARIZONA,DEPT PHYS,TUCSON,AZ 85721
关键词
D O I
10.1063/1.107789
中图分类号
O59 [应用物理学];
学科分类号
摘要
The carrier density modulation response of a semiconductor laser medium is analyzed. The differential gain and linewidth enhancement factor are computed as functions of strain and threshold gain. The example of InGaAs/InP with different InAs content is used to illustrate the situations of zero, tensile and compressive strain.
引用
收藏
页码:758 / 760
页数:3
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