INDIRECT EXCITON DISPERSION AND LINE-SHAPE IN GE

被引：36

作者：

ALTARELLI, M

LIPARI, NO

机构：

[1] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801

[2] XEROX CORP,RES CTR,WEBSTER,NY 14580

[3] UNIV ILLINOIS,MAT RES LAB,URBANA,IL

来源：

PHYSICAL REVIEW LETTERS | 1976年 / 36卷 / 11期

关键词：

D O I：

10.1103/PhysRevLett.36.619

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：619 / 622

页数：4

共 10 条

[1]

ALTARELLI M, TO BE PUBLISHED

[2] CUBIC CONTRIBUTIONS TO SPHERICAL MODEL OF SHALLOW ACCEPTOR STATES [J].

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LIPARI, NO .

PHYSICAL REVIEW B, 1974, 9 (04) :1525-1539

[3] SPHERICAL MODEL OF SHALLOW ACCEPTOR STATES IN SEMICONDUCTORS [J].

BALDERESCHI, A ;

LIPARI, NO .

PHYSICAL REVIEW B, 1973, 8 (06) :2697-2709

[4] EFFECTIVE MASS APPROXIMATION FOR EXCITONS [J].

DRESSELHAUS, G .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1956, 1 (1-2) :14-22

[5] MASS REVERSAL EFFECT IN SPLIT INDIRECT EXCITON OF GE [J].

FROVA, A ;

THOMAS, GA ;

MILLER, RE ;

KANE, EO .

PHYSICAL REVIEW LETTERS, 1975, 34 (25) :1572-1575

[6]

FROVA A, COMMUNICATION

[7] EXCITON DISPERSION IN DEGENERATE BANDS [J].

KANE, EO .

PHYSICAL REVIEW B, 1975, 11 (10) :3850-3859

[8] ANGULAR MOMENTUM THEORY AND LOCALIZED STATS IN SOLIDS - INVESTIGATION OF SHALLOW ACCEPTOR STATES IN SEMICONDUCTORS [J].

LIPARI, NO ;

BALDERESCHI, A .

PHYSICAL REVIEW LETTERS, 1970, 25 (24) :1660-+

[9]

LIPARI NO, TO BE PUBLISHED

[10]

SIDOROV VI, 1973, SOV PHYS SEMICOND+, V6, P2015

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