HIGH-ENERGY ION-IMPLANTATION FOR C-MOS ISOLATION N-WELLS TECHNOLOGY - PROBLEMS RELATED TO THE USE OF MULTICHARGED PHOSPHORUS IONS IN AN INDUSTRIAL CONTEXT

被引：18

作者：

SPINELLI, P

ESCARON, J

SOUBIE, A

BRUEL, M

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1985年 / 6卷 / 1-2期

关键词：

D O I：

10.1016/0168-583X(85)90646-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

收藏

页码：283 / 286

页数：4

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CHIVERS, DJ ;

GARD, GA .

NUCLEAR INSTRUMENTS & METHODS, 1977, 143 (01) :99-115

[4]

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[5]

HU BJ, 1983, IEDM, P739