CONVERGENCE PROPERTIES OF NEWTON METHOD FOR THE SOLUTION OF THE SEMICONDUCTOR TRANSPORT-EQUATIONS AND HYBRID SOLUTION TECHNIQUES FOR MULTIDIMENSIONAL SIMULATION OF VLSI DEVICES

被引:7
作者
AKCASU, OE
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D O I
10.1016/0038-1101(84)90165-5
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:319 / 328
页数:10
相关论文
共 47 条
[1]   2-DIMENSIONAL SEMICONDUCTOR ANALYSIS USING FINITE-ELEMENT METHOD [J].
ADACHI, T ;
YOSHII, A ;
SUDO, T .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (07) :1026-1031
[2]  
ADLER MS, 1979, JUN NASECODE I C
[3]  
Akcasu O. E., 1982, International Electron Devices Meeting. Technical Digest, P692
[4]  
AKCASU OE, 1980, THESIS U BRADFORD EN
[5]  
[Anonymous], 1966, Matrix iterative analysis
[6]   ELECTRON AND HOLE MOBILITIES IN SILICON AS A FUNCTION OF CONCENTRATION AND TEMPERATURE [J].
ARORA, ND ;
HAUSER, JR ;
ROULSTON, DJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (02) :292-295
[7]   GLOBAL APPROXIMATE NEWTON METHODS [J].
BANK, RE ;
ROSE, DJ .
NUMERISCHE MATHEMATIK, 1981, 37 (02) :279-295
[8]   PARAMETER SELECTION FOR NEWTON-LIKE METHODS APPLICABLE TO NON-LINEAR PARTIAL-DIFFERENTIAL EQUATIONS [J].
BANK, RE ;
ROSE, DJ .
SIAM JOURNAL ON NUMERICAL ANALYSIS, 1980, 17 (06) :806-822
[9]  
BANK RE, 1982, JOINT SIAM IEEE C NU
[10]   FINITE-ELEMENT METHODS IN SEMICONDUCTOR-DEVICE SIMULATION [J].
BARNES, JJ ;
LOMAX, RJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (08) :1082-1089