FINITE-ELEMENT METHODS IN SEMICONDUCTOR-DEVICE SIMULATION

[1] FINITE-ELEMENT SIMULATION OF GAAS MESFETS WITH LATERAL DOPING PROFILES AND SUBMICRON GATES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (09) : 1042 - 1048

[2] TRANSIENT 2-DIMENSIONAL SIMULATION OF A SUBMICROMETER GATE-LENGTH MESFET [J]. ELECTRONICS LETTERS, 1975, 11 (21) : 519 - 521

[3] BARNES JJ, 1974, ELECTRON LETT, V10, P341, DOI 10.1049/el:19740270

[4] BARNES JJ, 1976, RADCTR76153 GRIFF AI

[5] Bathe K. J., 1976, NUMERICAL METHODS FI

[6] BUTURLA EM, 1974, SEP P INT C COMP MET, P512

[7] CALAHAN DA, 1977, SEL96 U MICH SYST EN

[8] CALZOLARI P, 1974, P INT S FINITE ELEME

[9] COTTRELL PE, 1975, DEC IEEE INT EL DEV, P51

[10] FINITE-ELEMENT MODELS FOR OCEAN CIRCULATION PROBLEMS [J]. SIAM JOURNAL ON APPLIED MATHEMATICS, 1975, 29 (03) : 371 - 387

[1] FINITE-ELEMENT SIMULATION OF GAAS MESFETS WITH LATERAL DOPING PROFILES AND SUBMICRON GATES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (09) : 1042 - 1048

[2] TRANSIENT 2-DIMENSIONAL SIMULATION OF A SUBMICROMETER GATE-LENGTH MESFET [J]. ELECTRONICS LETTERS, 1975, 11 (21) : 519 - 521

[3] BARNES JJ, 1974, ELECTRON LETT, V10, P341, DOI 10.1049/el:19740270

[4] BARNES JJ, 1976, RADCTR76153 GRIFF AI

[5] Bathe K. J., 1976, NUMERICAL METHODS FI

[6] BUTURLA EM, 1974, SEP P INT C COMP MET, P512

[7] CALAHAN DA, 1977, SEL96 U MICH SYST EN

[8] CALZOLARI P, 1974, P INT S FINITE ELEME

[9] COTTRELL PE, 1975, DEC IEEE INT EL DEV, P51

[10] FINITE-ELEMENT MODELS FOR OCEAN CIRCULATION PROBLEMS [J]. SIAM JOURNAL ON APPLIED MATHEMATICS, 1975, 29 (03) : 371 - 387