TRANSIENT 2-DIMENSIONAL SIMULATION OF A SUBMICROMETER GATE-LENGTH MESFET

被引:5
作者
BARNES, JJ [1 ]
LOMAX, RJ [1 ]
机构
[1] UNIV MICHIGAN,DEPT ELECTRICAL & COMP ENGN,ELECTRON PHYS LAB,ANN ARBOR,MI 48104
关键词
D O I
10.1049/el:19750400
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:519 / 521
页数:3
相关论文
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FIX G, TO BE PUBLISHED
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