DEEP LEVEL PHOTOLUMINESCENCE SPECTROSCOPY OF CDTE EPITAXIAL LAYER SURFACES

被引：13

作者：

SHAW, JL

BRILLSON, LJ

SIVANANTHAN, S

FAURIE, JP

机构：

[1] XEROX CORP,WEBSTER RES LAB,WEBSTER,NY 14580

[2] UNIV ILLINOIS,DEPT PHYS,MICROPHYS LAB,CHICAGO,IL 60680

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 13期

关键词：

D O I：

10.1063/1.102532

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have used deep level photoluminescence spectroscopy to investigate the surface electronic quality of molecular beam epitaxy (MBE) grown CdTe layers during ultrahigh vacuum cleaning. Spectra are highly sensitive to heat treatment, contamination, and electron beam exposure. The technique provides a guide to growth and cleaning of MBE films of optimal electronic quality, which exhibit intense near-band-edge and minimal deep level emission and which exceed substantially the electronic quality of bulk CdTe crystals.

引用

页码：1266 / 1268

页数：3

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