PROCESSING AND CHARACTERIZATION OF SOL-GEL DERIVED VERY THIN-FILM FERROELECTRIC CAPACITORS

被引：35

作者：

SANCHEZ, LE

DION, DT

WU, SY

NAIK, IK

机构：

[1] McDonnell Douglas Electronic Systems Company, Huntington Beach, CA 92647

来源：

FERROELECTRICS | 1991年 / 116卷 / 1-2期

关键词：

D O I：

10.1080/00150199108007926

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The processing and characterization of very thin (425-1250Å) film lead zirconate-titanate (PZT) ferroelectric capacitors, made by the sol-gel method, are described. Capacitors with a PZT film thickness of approximately 500° have been found to switch and saturate at 3 volts. Such capacitors are being integrated with GaAs JFET technology for the fabrication of GaAs nonvolatile memories where a switching voltage of 3 volts is employed. The effects of various processing parameters on the performance of the PZT capacitors are presented. © 1991, Taylor & Francis Group, LLC. All rights reserved.

引用

页码：1 / 17

页数：17

共 14 条

[1] Artaki I., 1986, SCI CERAMIC CHEM PRO, P73
[2] SOL-GEL-DERIVED PBTIO3
BLUM, JB
GURKOVICH, SR
[J]. JOURNAL OF MATERIALS SCIENCE, 1985, 20 (12) : 4479 - 4483
[3] Budd K., 1985, P BRIT CERAMIC SOC, V36, P107
[4] BUDD KD, 1986, BETTER CERAMICS CH 2, V73, P711
[5] GLASSY AND CRYSTALLINE SYSTEMS FROM GELS - CHEMICAL BASIS AND TECHNICAL APPLICATION
DISLICH, H
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 57 (03) : 371 - 388
[6] PREPARATION OF FERROELECTRIC PZT FILMS BY THERMAL-DECOMPOSITION OF ORGANOMETALLIC COMPOUNDS
FUKUSHIMA, J
KODAIRA, K
MATSUSHITA, T
[J]. JOURNAL OF MATERIALS SCIENCE, 1984, 19 (02) : 595 - 598
[7] HENCH LL, 1986, MATER RES SOC S P, V73, P35
[8] HENCH LL, 1986, SCI CERAMIC CHEM PRO, P52
[9] MADERIC BP, IN PRESS FERROELECTR
[10] SOL-GEL PROCESSES IN GLASS SCIENCE AND TECHNOLOGY
MUKHERJEE, SP
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 42 (1-3) : 477 - 488

← 1 2 →