EXPERIMENTAL-STUDY OF P-LAYERS IN TUNNEL-JUNCTIONS FOR HIGH-EFFICIENCY AMORPHOUS-SILICON ALLOY MULTIJUNCTION SOLAR-CELLS AND MODULES

被引：23

作者：

BANERJEE, A

YANG, J

GLATFELTER, T

HOFFMAN, K

GUHA, S

机构：

[1] United Solar Systems Corp., Troy, MI 48084

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 12期

关键词：

D O I：

10.1063/1.111877

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The role of the p layer in the formation of good quality ''tunnel'' junctions and its dependence on the attainment of high efficiency hydrogenated amorphous silicon alloy (a-Si:H) multijunction cells has been investigated. A new technique, namely, the evaluation of the current-voltage characteristics of the NIPN structure consisting of a single-junction n-i-p cell with an overlying doped n layer, has been developed for the determination of losses at the ''tunnel'' junction. Using an optimized p layer, an initial conversion efficiency of 11.4% has been obtained on a double junction a-Si:H module of aperture area approximately 900 cm2.

引用

页码：1517 / 1519

页数：3

共 7 条

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